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dc.contributor.author | Lado Touriño, María Isabel | |
dc.contributor.author | Tsobnang, F. | |
dc.date.accessioned | 2016-07-28T09:14:55Z | |
dc.date.available | 2016-07-28T09:14:55Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | Lado-Touriño, I., & Tsobnang, F. (2005). O interstitial energetics in Ti from ab initio calculations. Computational Materials Science, 32(1), 13-19. | spa |
dc.identifier.issn | 09270256 | |
dc.identifier.uri | http://hdl.handle.net/11268/5501 | |
dc.description.abstract | Ti-porcelain systems have been used in prosthetic dentistry since 1980. The chemical bonding in this kind of systems is generally attributed to oxidic compounds. The porcelain functions as an O donator and stoichiometric and non-stoichiometric titanium oxides are formed at the interface. These oxides result in substantial distortion of the crystalline structure and failure of bonding. A useful technique for surface conditioning is the silicon-ion implantation, which results in the formation of a metal–silicon zone protecting against O diffusion. In dental materials technology, processes on the atomic scale have been investigated insufficiently or not at all. In this work, we present ab initio calculations on the energetics of an O interstitial in a Ti crystal. The aim of our study is getting new insight into the atomic scale properties of these Ti-porcelain systems. | spa |
dc.description.sponsorship | Sin financiación | spa |
dc.language.iso | eng | spa |
dc.title | O interstitial energetics in Ti from ab initio calculations | spa |
dc.type | article | spa |
dc.description.impact | 1.494 JCR (2005) Q1, 43/178 Material science, multidisciplinary | spa |
dc.identifier.doi | 10.1016/j.commatsci.2004.05.005 | |
dc.rights.accessRights | closedAccess | spa |
dc.subject.uem | Odontología estética | spa |
dc.subject.unesco | Odontología | spa |
dc.description.filiation | UEM | spa |
dc.peerreviewed | Si | spa |
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